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NXP Semiconductors Electronic Components Datasheet

PHP1N50E Datasheet

PowerMOS transistor

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Philips Semiconductors
PowerMOS transistor
Objective Specification
PHP1N50E
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic envelope featuring high
avalanche energy capability, stable
blocking voltage, fast switching and
high thermal cycling performance
with low thermal resistance. Intended
for use in Switched Mode Power
Supplies (SMPS), motor control
circuits and general purpose
switching applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
RDS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Drain-source on-state resistance
MAX.
500
2
50
5
UNIT
V
A
W
PINNING - TO220AB
PIN DESCRIPTION
1 gate
2 drain
3 source
tab drain
PIN CONFIGURATION
tab
1 23
SYMBOL
d
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDS
VDGR
±VGS
ID
IDM
IDR
IDRM
Ptot
Tstg
Tj
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (pulse peak
value)
Source-drain diode current
(DC)
Source-drain diode current
(pulse peak value)
Total power dissipation
Storage temperature
Junction temperature
RGS = 20 k
Tmb = 25 ˚C
Tmb = 100 ˚C
Tmb = 25 ˚C
Tmb = 25 ˚C
Tmb = 25 ˚C
Tmb = 25 ˚C
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER
WDSS
Drain-source non-repetitive
unclamped inductive turn-off
energy
WDSR1
Drain-source repetitive
unclamped inductive turn-off
energy
CONDITIONS
ID = 2 A ; VDD 50 V ; VGS = 10 V ;
RGS = 50
Tj = 25˚C prior to surge
Tj = 100˚C prior to surge
ID = 2 A ; VDD 50 V ; VGS = 10 V ;
RGS = 50 ; Tj 150 ˚C
MIN.
-
-
-
-
-
-
-
-
-
-55
-
MIN.
-
-
-
MAX.
500
500
30
2.0
1.3
8.0
2.0
8.0
50
150
150
MAX.
120
20
3.6
UNIT
V
V
V
A
A
A
A
A
W
˚C
˚C
UNIT
mJ
mJ
mJ
1. Pulse width and frequency limited by Tj(max)
October 1996
1
Rev 1.000


NXP Semiconductors Electronic Components Datasheet

PHP1N50E Datasheet

PowerMOS transistor

No Preview Available !

Philips Semiconductors
PowerMOS transistor
Objective specification
PHP1N50E
THERMAL RESISTANCES
SYMBOL
Rth j-mb
Rth j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
MIN. TYP. MAX. UNIT
- - 2.5 K/W
- 60 - K/W
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
V(BR)DSS
VGS(TO)
IDSS
Drain-source breakdown
voltage
Gate threshold voltage
Drain-source leakage current
IGSS
RDS(ON)
VSD
Gate-source leakage current
Drain-source on-state
resistance
Source-drain diode forward
voltage
CONDITIONS
VGS = 0 V; ID = 0.25 mA
VDS = VGS; ID = 0.25 mA
VDS = 500 V; VGS = 0 V; Tj = 25 ˚C
VDS = 400 V; VGS = 0 V; Tj = 125 ˚C
VGS = ±30 V; VDS = 0 V
VGS = 10 V; ID = 1 A
IF = 2 A ;VGS = 0 V
MIN.
500
2.0
-
-
-
-
-
TYP. MAX. UNIT
- -V
3.0 4.0 V
10 100 µA
0.1 1.0 mA
10 100 nA
4.5 5.0
0.8 1.2 V
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
gfs
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
td on
tr
td off
tf
trr
Qrr
Forward transconductance
Input capacitance
Output capacitance
Feedback capacitance
Total gate charge
Gate to source charge
Gate to drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Source-drain diode reverse
recovery time
Source-drain diode reverse
recovery charge
Ld Internal drain inductance
Ld Internal drain inductance
Ls Internal source inductance
CONDITIONS
VDS = 15 V; ID = 1 A
VGS = 0 V; VDS = 25 V; f = 1 MHz
VGS = 10 V; ID = 2 A; VDS = 400 V
VDD = 30 V; ID = 2 A;
VGS = 10 V; RGS = 50 ;
RGEN = 50
IF = 2 A; -dIF/dt = 100 A/µs;
VGS = 0 V; VR = 100 V
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
MIN.
0.5
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
0.9
230
35
14
10
1
5
10
30
30
20
350
MAX.
-
300
50
30
-
-
-
15
45
40
30
-
UNIT
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
2.5 - µC
- 3.5 - nH
- 4.5 - nH
- 7.5 - nH
October 1996
2
Rev 1.000


Part Number PHP1N50E
Description PowerMOS transistor
Maker NXP
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PHP1N50E Datasheet PDF






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