PHP130N03LT Datasheet | NXP Semiconductors

Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET Features - ’Trench’ technology - Very low on-state resistance - Fast switching - Stable off-state characteristics - High thermal cycling performance - Low thermal resistance PHP130N03LT, PHB130N03LT SYMBOL d QUICK REFERENCE DATA VDSS = 30 V ID = 75 A g s RDS(ON) ≤ 6 mΩ (VGS = 5 V) RDS(ON) ≤ 5 mΩ (VGS = 10 V) GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP130N03LT is...