PHP125 Datasheet | NXP Semiconductors

FEATURES - High-speed switching - No secondary breakdown - Very low on-resistance. APPLICATIONS - Motor and actuator driver - Power management - Synchronized rectification. 1 4 n.c. s handbook, halfpage DESCRIPTION P-channel enhancement mode MOS transistor in an 8-pin plastic SO8 (SOT96-1) package. d 5 d d d PINNING - SO8 (SOT96-1) PIN 1 2 3 4 5 6 7 8 SYMBOL n.c. s s g d d d d DESCRIPTION not connected source source gate drain drain drain drain CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. Fig.1 Simplified outline and symbol. MAM115 s g QUICK REFERENCE DATA SYMBOL VDS VSD VGS VGSth ID RDSon Ptot PARAMETER drain-source voltage (DC) source-drain diode forward voltage gate-source voltage (DC) gate-source threshold voltage drain current (DC) drain-source on-state resistance total power dissipation ID = - 1 m A; VDS = VGS Ts = 80 °C ID = - 1 A; VGS = - 10 V Ts = 80 °C IS = - 1.25 A CONDITIONS - - - - 1 - - - MIN. MAX. - 30 - 1.6 ±20 - 2.8 - 2.5 0.25 2.8 V V V V A Ω W UNIT 1997 Jun 18 Philips Semiconductors Product specification P-channel enhancement mode MOS transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VGS ID IDM Ptot PARAMETER drain-source voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation Ts = 80 °C; note 1 note 2 Ts = 80 °C Tamb = 25 °C; note 3 Tamb = 25 °C; note 4 Tstg Tj IS ISM Notes 1. Ts is the temperature at the soldering point of the drain lead. 2. Pulse width and duty cycle limited by maximum junction temperature. 3. Value based on a printed-circuit board with a Rth a-tp (ambient to tie-point) of 27.5 K/W. 4. Value based on a printed-circuit board with a Rth a-tp (ambient to tie-point) of 90 K/W. storage temperature operating junction temperature Ts = 80 °C note 2 CONDITIONS - - - - - - - - 65 - 65 - -...