Datasheet4U Logo Datasheet4U.com

PHP1035 - P-channel enhancement mode MOS transistor

General Description

P-channel enhancement mode MOS transistor in an 8-pin SOT96-1 (SO8) SMD plastic package.

CAUTION The device is supplied in an antistatic package.

The gate-source input must be protected against static discharge during transport or handling.

Key Features

  • Very low RDSon.
  • High-speed switching.
  • No secondary breakdown.
  • Direct interface to C-MOS, TTL, etc.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PHP101NQ04T N-channel TrenchMOS standard level FET NXP Semiconductors
PHP110NQ06LT N-channel TrenchMOS logic level FET NXP Semiconductors
PHP110NQ08LT N-channel TrenchMOS logic level FET NXP Semiconductors
PHP110NQ08T N-channel TrenchMOS standard level FET NXP Semiconductors
PHP119NQ06T N-channel TrenchMOS standard level FET NXP Semiconductors

Other Datasheets by NXP Semiconductors

Part Number Description
PHP101NQ03LT TrenchMOS logic level FET
PHP1025 P-channel enhancement mode MOS transistor
PHP108NQ03LT TrenchMOS logic level FET
PHP109 P-channel enhancement mode MOS transistor
PHP10N10E PowerMOS transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DISCRETE SEMICONDUCTORS DATA SHEET PHP1035 P-channel enhancement mode MOS transistor Preliminary specification File under Discrete Semiconductors, SC13b 1998 Feb 18 Philips Semiconductors Preliminary specification P-channel enhancement mode MOS transistor FEATURES • Very low RDSon • High-speed switching • No secondary breakdown • Direct interface to C-MOS, TTL, etc. APPLICATIONS • Power management • DC-DC converters • General purpose switch. DESCRIPTION P-channel enhancement mode MOS transistor in an 8-pin SOT96-1 (SO8) SMD plastic package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling.