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PHN405 - 4 N-channel 60 mohm FET array enhancement mode MOS transistors

General Description

Four enhancement mode MOS transistors in a 16-pin plastic SOT338-1 (SSOP16) package.

Two transistors feature current monitoring (sense FETs).

CAUTION The device is supplied in an antistatic package.

Key Features

  • High-speed switching.
  • No secondary breakdown.
  • Very low on-state resistance.
  • Current monitoring.

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Datasheet Details

Part number PHN405
Manufacturer NXP Semiconductors
File Size 94.45 KB
Description 4 N-channel 60 mohm FET array enhancement mode MOS transistors
Datasheet download datasheet PHN405 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET PHN405 4 N-channel 60 mΩ FET array enhancement mode MOS transistors Product specification Supersedes data of 1997 Jun 19 File under Discrete Semiconductors, SC13 1998 Mar 17 Philips Semiconductors Product specification 4 N-channel 60 mΩ FET array enhancement mode MOS transistors FEATURES • High-speed switching • No secondary breakdown • Very low on-state resistance • Current monitoring. APPLICATIONS • Motor and actuator driver • Power management • Synchronized rectification. DESCRIPTION Four enhancement mode MOS transistors in a 16-pin plastic SOT338-1 (SSOP16) package. Two transistors feature current monitoring (sense FETs). CAUTION The device is supplied in an antistatic package.