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PHK5NQ10T - N-channel TrenchMOS transistor

General Description

N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology.

Motor and relay drivers

d.c.

to d.c.

converters The PHK5NQ10T is supplied in the SOT96-1 (SO8) surface mounting package.

Key Features

  • Low on-state resistance.
  • Fast switching.
  • Low profile surface mount package SYMBOL d QUICK.

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Full PDF Text Transcription (Reference)

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Philips Semiconductors Product specification N-channel TrenchMOSTM transistor PHK5NQ10T FEATURES • Low on-state resistance • Fast switching • Low profile surface mount package SYMBOL d QUICK REFERENCE DATA VDS = 100 V ID = 5 A g RDS(ON) ≤ 50 mΩ (VGS = 10 V) s GENERAL DESCRIPTION N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. Applications:• Motor and relay drivers • d.c. to d.c. converters The PHK5NQ10T is supplied in the SOT96-1 (SO8) surface mounting package.