PHD6N10E
Overview
Philips Semiconductors Product specification PowerMOS transistor PHD6N10E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mo...
| Part | PHD6N10E |
|---|---|
| Description | PowerMOS transistor |
| Category | Transistor |
| Manufacturer | NXP Semiconductors |
| Size | 70.04 KB |