PHD6N10E
Overview
Philips Semiconductors Product specification PowerMOS transistor PHD6N10E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mo...
- Part: PHD6N10E
- Description: PowerMOS transistor
- Category: Transistor
- Manufacturer: NXP Semiconductors
- Size: 70.04 KB