N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycling performance with low thermal resistance.
| Part number | PHD2N60 |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 80.14 KB |
| Description | PowerMOS transistor |
| Datasheet |
 PHD2N60 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| PHD20N06T | N-channel TrenchMOS standard level FET | nexperia |
| PHD22NQ20T | N-channel TrenchMOS standard level FET | NXP Semiconductors |
| PHD13003C | NPN power transistor | WeEn |
| PHD16N03LT | N-channel TrenchMOS logic level FET | NXP Semiconductors |
| PHD16N03T | TrenchMOS standard level FET | NXP Semiconductors |
| Part Number | Description |
|---|---|
| PHD2N60E | Transistor |
| PHD2N50E | Transistor |
| PHD20N06T | N-Channel Transistor |
| PHD21N06LT | N-Channel MOSFET |
| PHD23NQ10T | N-Channel Transistor |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
