Datasheet Details
| Part number | PHD11N06LT |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 76.41 KB |
| Description | Transistor |
| Datasheet |
 PHD11N06LT Datasheet
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| Part number | PHD11N06LT |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 76.41 KB |
| Description | Transistor |
| Datasheet |
PHD11N06LT Datasheet
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N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology.
The device has very low on-state resistance.
It is intended for use in dc to dc converters and general purpose switching applications.
Philips Semiconductors Product specification TrenchMOS™ transistor Logic level.
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