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PHC20306 - MOSFET

Description

One N-channel and one P-channel enhancement mode MOS transistor in an 8-pin SOT96-1 (SO8) plastic package.

CAUTION The device is supplied in an antistatic package.

The gate-source input must be protected against static discharge during transport or handling.

Features

  • Very low on-state resistance.
  • High-speed switching.
  • No secondary breakdown.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET PHC20306 Complementary enhancement mode MOS transistor Objective specification File under Discrete Semiconductors, SC13b 1998 Feb 18 Philips Semiconductors Objective specification Complementary enhancement mode MOS transistor FEATURES • Very low on-state resistance • High-speed switching • No secondary breakdown. APPLICATIONS • Motor and actuator driver • Power management • Synchronized rectification. DESCRIPTION One N-channel and one P-channel enhancement mode MOS transistor in an 8-pin SOT96-1 (SO8) plastic package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling.
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