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NXP Semiconductors Electronic Components Datasheet

PHB78NQ03LT Datasheet

N-channel enhancement mode field-effect transistor

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PHP/PHB/PHD78NQ03LT
N-channel enhancement mode field-effect transistor
Rev. 01 — 14 November 2001
Product data
1. Product profile
1.1 Description
N-channel logic level field-effect power transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
PHP78NQ03LT in SOT78 (TO-220AB)
PHB78NQ03LT in SOT404 (D2-PAK)
PHD78NQ03LT in SOT428 (D-PAK).
1.2 Features
s Low on-state resistance
s Fast switching
1.3 Applications
s Computer motherboards
s DC to DC converters
1.4 Quick reference data
s VDS = 25 V
s Ptot = 93 W (Tmb = 25 °C)
s ID = 75 A (Tmb = 25 °C)
s RDSon = 9 m(Tj = 25 °C)
2. Pinning information
Table 1: Pinning - SOT78, SOT404, SOT428 simplified outlines and symbol
Pin Description
Simplified outline
1 gate (g)
2 drain (d)
mb
[1]
mb
mb
3 source (s)
mb mounting base,
connected to
drain (d)
MBK106
123
2
1 3 MBK116
2
1
Top view
3
MBK091
SOT78 (TO-220AB) SOT404 (D2-PAK) SOT428 (D-PAK)
Symbol
g
MBB076
[1] It is not possible to make connection to pin 2 of the SOT404 or SOT428 packages.
d
s


NXP Semiconductors Electronic Components Datasheet

PHB78NQ03LT Datasheet

N-channel enhancement mode field-effect transistor

No Preview Available !

Philips Semiconductors
PHP/PHB/PHD78NQ03LT
N-channel enhancement mode field-effect transistor
3. Limiting values
Table 2: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
VGSM
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
gate-source voltage
ID drain current (DC)
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj operating junction temperature
Source-drain diode
Tj = 25 to 175 °C
Tj = 25 to 175 °C; RGS = 20 k
tp 50 µs; pulsed;
duty cycle 25 %; Tj 150 °C
Tmb = 25 °C; VGS = 5 V; Figure 2 and 3
Tmb = 100 °C; VGS = 5 V; Figure 2
Tmb = 25 °C; VGS = 10 V
Tmb = 100 °C; VGS = 10 V
Tmb = 25 °C; pulsed; tp 10 µs; Figure 3
Tmb = 25 °C; Figure 1
IS source (diode forward) current (DC) Tmb = 25 °C
ISM peak source (diode forward) current Tmb = 25 °C; pulsed; tp 10 µs
Min Max Unit
- 25 V
- 25 V
- ±15 V
- ±20 V
- 61 A
- 43 A
- 75 A
- 53 A
- 228 A
- 93 W
55 +175 °C
55 +175 °C
- 75 A
- 228 A
9397 750 08916
Product data
Rev. 01 — 14 November 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
2 of 14


Part Number PHB78NQ03LT
Description N-channel enhancement mode field-effect transistor
Maker NXP
Total Page 14 Pages
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