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PHB4N60E

PHB4N60E is PowerMOS transistors Avalanche energy rated manufactured by NXP Semiconductors.
PHB4N60E datasheet preview

PHB4N60E Datasheet

Part number PHB4N60E
Download PHB4N60E Datasheet (PDF)
File Size 80.58 KB
Manufacturer NXP Semiconductors
Description PowerMOS transistors Avalanche energy rated
PHB4N60E page 2 PHB4N60E page 3

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PHB4N60E Distributor

PHB4N60E Description

N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and puter monitor power supplies, d.c. converters, motor control circuits and general purpose switching applications.

PHB4N60E Key Features

  • Repetitive Avalanche Rated
  • Fast switching
  • Stable off-state characteristics
  • High thermal cycling performance
  • Low thermal resistance

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