PHB3N60E Datasheet | NXP Semiconductors

Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated Features - Repetitive Avalanche Rated - Fast switching - Stable off-state characteristics - High thermal cycling performance - Low thermal resistance PHP3N60E, PHB3N60E SYMBOL d QUICK REFERENCE DATA VDSS = 600 V g ID = 2.8 A RDS(ON) ≤ 4.4 Ω s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and puter monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP3N60E is supplied in the SOT78 (TO220AB) conventional leaded package. The...