PHB36N06E datasheet by NXP Semiconductors.
| Part number | PHB36N06E |
|---|---|
| Datasheet | PHB36N06E_PhilipsSemiconductors.pdf |
| File Size | 55.07 KB |
| Manufacturer | NXP Semiconductors |
| Description | PowerMOS transistor |
|
|
N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX.
View all NXP Semiconductors datasheets
| Part Number | Description |
|---|---|
| PHB30NQ15T | N-channel TrenchMOS transistor |
| PHB33NQ20T | N-channel TrenchMOS standard level FET |
| PHB34NQ10T | N-channel TrenchMOS transistor |
| PHB37N06LT | TrenchMOS transistor Logic level FET |
| PHB37N06T | TrenchMOS transistor Standard level FET |
| PHB38N02LT | TrenchMOS logic level FET |
| PHB3N40E | PowerMOS transistors Avalanche energy rated |
| PHB3N50E | PowerMOS transistors Avalanche energy rated |
| PHB3N60E | PowerMOS transistors Avalanche energy rated |
| PHB100N03LT | N-channel enhancement mode field-effect transistor |
