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NXP Semiconductors Electronic Components Datasheet

PHB36N06E Datasheet

PowerMOS transistor

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Philips Semiconductors
PowerMOS transistor
Product specification
PHB36N06E
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic envelope suitable for surface
mount applications.
The device is intended for use in
automotive and general purpose
switching applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
Tj
RDS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
MAX.
60
41
125
175
38
PINNING - SOT404
PIN DESCRIPTION
1 gate
2 drain
3 source
mb drain
PIN CONFIGURATION
mb
2
13
SYMBOL
d
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDS
VDGR
±VGS
ID
ID
IDM
Ptot
Tstg
Tj
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction temperature
-
RGS = 20 k
-
Tmb = 25 ˚C
Tmb = 100 ˚C
Tmb = 25 ˚C
Tmb = 25 ˚C
-
-
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-mb
Rth j-a
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
-
minimum footprint,
FR4 board (see Fig. 18).
MIN.
-
-
-
-
-
-
-
- 55
-
TYP.
-
50
MAX.
60
60
30
41
29
164
125
175
175
MAX.
1.2
-
UNIT
V
A
W
˚C
m
UNIT
V
V
V
A
A
A
W
˚C
˚C
UNIT
K/W
K/W
August 1996
1
Rev 1.000


NXP Semiconductors Electronic Components Datasheet

PHB36N06E Datasheet

PowerMOS transistor

No Preview Available !

Philips Semiconductors
PowerMOS transistor
Product specification
PHB36N06E
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
V(BR)DSS
VGS(TO)
IDSS
IDSS
IGSS
RDS(ON)
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Zero gate voltage drain current
Gate source leakage current
Drain-source on-state
resistance
CONDITIONS
VGS = 0 V; ID = 0.25 mA
VDS = VGS; ID = 1 mA
VDS = 60 V; VGS = 0 V; Tj = 25 ˚C
VDS = 60 V; VGS = 0 V; Tj = 125 ˚C
VGS = ±30 V; VDS = 0 V
VGS = 10 V; ID = 20 A
MIN. TYP. MAX. UNIT
60 - - V
2.1 3.0 4.0 V
- 1 10 µA
- 0.1 1.0 mA
- 10 100 nA
- 30 38 m
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
gfs Forward transconductance
Ciss Input capacitance
Coss Output capacitance
Crss Feedback capacitance
td on Turn-on delay time
tr Turn-on rise time
td off Turn-off delay time
tf Turn-off fall time
Ld Internal drain inductance
Ls Internal source inductance
CONDITIONS
VDS = 25 V; ID = 20 A
VGS = 0 V; VDS = 25 V; f = 1 MHz
VDD = 30 V; ID = 3 A;
VGS = 10 V; RGS = 50 ;
Rgen = 50
Measured from upper edge of drain
tab to centre of die
Measured from source lead
soldering point to source bond pad
MIN.
7
-
-
-
-
-
-
-
-
-
TYP.
14
900
420
160
15
55
75
60
2.5
7.5
MAX.
-
1600
600
275
30
90
125
100
-
UNIT
S
pF
pF
pF
ns
ns
ns
ns
nH
- nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IDR
Continuous reverse drain
-
current
IDRM Pulsed reverse drain current -
VSD Diode forward voltage
IF = 41 A ; VGS = 0 V
trr Reverse recovery time IF = 41 A; -dIF/dt = 100 A/µs;
Qrr
Reverse recovery charge
VGS = 0 V; VR = 30 V
AVALANCHE LIMITING VALUE
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
WDSS
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
ID = 41 A ; VDD 25 V ;
VGS = 10 V ; RGS = 50
MIN. TYP. MAX. UNIT
- - 41 A
- - 164 A
- 0.95 2.0 V
- 60 -
- 0.30 -
ns
µC
MIN. TYP. MAX. UNIT
- - 100 mJ
August 1996
2
Rev 1.000


Part Number PHB36N06E
Description PowerMOS transistor
Maker NXP
Total Page 7 Pages
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