PHB12NQ15T
Overview
N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance.
- ’Trench’ technology
- Low on-state resistance
- Fast switching
- Low thermal resistance SYMBOL VDSS = 150 V ID = 12.5 A g RDS(ON) ≤ 200 mΩ s
