PHB125N06T Overview
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device.
| Part number | PHB125N06T |
|---|---|
| Datasheet | PHB125N06T_PhilipsSemiconductors.pdf |
| File Size | 67.97 KB |
| Manufacturer | NXP Semiconductors |
| Description | TrenchMOS transistor Standard level FET |
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N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device.
See all NXP Semiconductors datasheets
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