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PH6030L - N-channel TrenchMOS logic level FET

General Description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

Key Features

  • Lead-free package.
  • Logic level compatibile.
  • Optimized for use in DC-to-DC converters.
  • Very low switching and conduction losses 1.3.

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Part Number Description
PH6325L N-channel TrenchMOS logic level FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PH6030L N-channel TrenchMOS logic level FET Rev. 01 — 29 July 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features and benefits „ Lead-free package „ Logic level compatibile „ Optimized for use in DC-to-DC converters „ Very low switching and conduction losses 1.3 Applications „ DC-to-DC convertors „ Notebook computers „ Switched-mode power supplies „ Voltage regulators 1.4 Quick reference data Table 1. Quick reference Symbol VDS ID Parameter drain-source voltage drain current Conditions Tj ≥ 25 °C; Tj ≤ 150 °C Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 3 Dynamic characteristics QGD gate-drain charge VGS = 4.