PH6030L Datasheet | NXP Semiconductors

N-channel TrenchMOS logic level FET Rev. 01 - 29 July 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features and benefits - Lead-free package - Logic level patibile - Optimized for use in DC-to-DC converters - Very low switching and conduction losses 1.3 Applications - DC-to-DC convertors - Notebook puters - Switched-mode power supplies - Voltage regulators 1.4 Quick reference data Table 1. Quick reference Symbol VDS ID Parameter drain-source voltage drain current Conditions Tj ≥ 25 °C; Tj ≤ 150 °C Tmb = 25 °C; VGS = 10 V;...