• Part: PESD15VS2UAT
  • Description: Double ESD protection diodes in SOT23 package
  • Category: Diode
  • Manufacturer: NXP Semiconductors
  • Size: 122.38 KB
Download PESD15VS2UAT Datasheet PDF
NXP Semiconductors
PESD15VS2UAT
FEATURES - Unidirectional ESD protection of up to two lines - mon-cathode configuration - Max. peak pulse power: Ppp = 330 W at tp = 8/20 µs - Low clamping voltage: V(CL)R = 20 V at Ipp = 18 A - Ultra-low reverse leakage current: IRM < 700 n A - ESD protection > 30 k V - IEC 61000-4-2; level 4 (ESD) - IEC 61000-4-5 (surge); Ipp = 18 A at tp = 8/20 µs. PINNING APPLICATIONS - puters and peripherals - munication systems - Audio and video equipment - Data lines - CAN bus protection. DESCRIPTION Unidirectional double ESD protection diodes in mon cathode configuration in the SOT23 plastic package. Designed to protect up to two transmission or data lines against damage from Electro Static Discharge (ESD) and other transients. MARKING TYPE NUMBER PESD3V3S2UAT PESD5V0S2UAT PESD12VS2UAT PESD15VS2UAT PESD24VS2UAT Note 1. - = p : made in Hong Kong. - = t : made in Malaysia. - = W : made in China. MARKING CODE(1) - 7A - 7B - 7C - 7D - 7E PESDx S2UAT series QUICK REFERENCE DATA SYMBOL VRWM Cd PARAMETER...