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PEMZ7 - NPN/PNP general purpose transistors

General Description

NPN/PNP low VCEsat transistor pair in a SOT666 plastic package.

Key Features

  • 300 mW total power dissipation.
  • Very small 1.6 × 1.2 mm ultra thin package.
  • Self alignment during soldering due to straight leads.
  • Low collector capacitance.
  • Low VCEsat.
  • High current capabilities.
  • Improved thermal behaviour due to flat leads.
  • Reduced required PCB area.
  • Reduced pick and place costs.

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PEMZ1 NPN/PNP general purpose transistors
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMZ7 NPN/PNP general purpose transistors Product specification Supersedes data of 2001 Sep 25 2001 Nov 07 Philips Semiconductors Product specification NPN/PNP general purpose transistors FEATURES • 300 mW total power dissipation • Very small 1.6 × 1.2 mm ultra thin package • Self alignment during soldering due to straight leads • Low collector capacitance • Low VCEsat • High current capabilities • Improved thermal behaviour due to flat leads • Reduced required PCB area • Reduced pick and place costs.