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PEMH9 - NPN/NPN resistor-equipped transistors

Description

NPN resistor-equipped transistors in a SOT666 plastic package.

Features

  • 300 mW total power dissipation.
  • Very small 1.6 × 1.2 mm ultra thin package.
  • Self alignment during soldering due to straight leads.
  • Replaces two SC-75/SC-89 packaged transistors on same PCB area.
  • Reduces required PCB area.
  • Reduced pick and place costs.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMH9 NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ Product specification Supersedes data of 2001 Oct 22 2001 Nov 07 Philips Semiconductors Product specification NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ FEATURES • 300 mW total power dissipation • Very small 1.6 × 1.2 mm ultra thin package • Self alignment during soldering due to straight leads • Replaces two SC-75/SC-89 packaged transistors on same PCB area • Reduces required PCB area • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplification • Inverter and interface circuits • Circuit driver. DESCRIPTION NPN resistor-equipped transistors in a SOT666 plastic package.
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