PEMD48 Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMD48 NPN/PNP resistor-equipped transistors; R1, R2 = 47 kΩ, 47 kΩ and 2.2 kΩ, 47 kΩ Product specification Supersedes data of 2001 Sep 24 2001 Nov 07 Philips Semiconductors Product specification NPN/PNP resistor-equipped transistors; R1, R2 = 47 kΩ, 47 kΩ and 2.2 kΩ, 47 kΩ Features - 300 m W total power dissipation - Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package - Reduces number of ponents as replacement of two SC-75/SC-89 packaged transistors - Reduces required board space - Reduces pick and place costs - Self alignment during soldering due to straight leads. APPLICATIONS - General purpose switching and amplification - Inverter and interface circuits - Circuit driver. DESCRIPTION NPN/PNP resistor-equipped transistors in a SOT666 plastic package. 1 2 3 1 Top view MAM448 QUICK REFERENCE DATA SYMBOL VCEO ICM R1 R2 PARAMETER collector-emitter voltage peak collector current MAX. 50 100 UNIT V m A kΩ kΩ kΩ kΩ Transistor TR1 (NPN) bias resistor bias resistor 47 47 Transistor TR2 (PNP) R1 R2 bias resistor bias resistor 2.2 47 handbook, halfpage 6 5 4 R1 TR1 R2 R2 TR2 R1 MARKING TYPE NUMBER PEMD48 PINNING PIN 1, 4 2, 5 6, 3 emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2 MARKING CODE 48 Fig.1 Simplified outline (SOT666) and symbol. 2, 5 1, 4 MBK120 6,...