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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PEMB10 PNP resistor-equipped double transistor R1 = 2.2 kΩ, R2 = 47 kΩ
Preliminary specification 2001 Sep 14
Philips Semiconductors
Preliminary specification
PNP resistor-equipped double transistor R1 = 2.2 kΩ, R2 = 47 kΩ
FEATURES • 300 mW total power dissipation • Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package • Excellent coplanarity due to straight leads • Reduces number of components as replacement of two SC-75/SC-89 packaged transistors • Reduces required board space • Reduces pick and place costs. APPLICATIONS • General purpose switching and amplification • Inverter and interface circuits • Circuit driver. DESCRIPTION PNP resistor-equipped double transistor in a SOT666 plastic package.
PEMB10 Datasheet
