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NXP Semiconductors Electronic Components Datasheet

PDTD123YT Datasheet

50V resistor-equipped transistor

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PDTB123YT
PNP 500 mA, 50 V resistor-equipped transistor;
R1 = 2.2 kΩ, R2 = 10 kΩ
Rev. 3 — 30 August 2010
Product data sheet
1. Product profile
1.1 General description
500 mA PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB)
Surface-Mounted Device (SMD) plastic package.
NPN complement: PDTD123YT.
1.2 Features and benefits
„ 500 mA output current capability
„ Built-in bias resistors
„ Simplifies circuit design
„ Reduces component count
„ Reduces pick and place costs
„ ±10 % resistor ratio tolerance
„ AEC-Q101 qualified
1.3 Applications
„ Digital application in automotive and
industrial segments
„ Control of IC inputs
„ Cost-saving alternative for BC807 series
in digital applications
„ Switching loads
1.4 Quick reference data
Table 1.
Symbol
VCEO
IO
R1
R2/R1
Quick reference data
Parameter
collector-emitter voltage
output current
bias resistor 1 (input)
bias resistor ratio
Conditions
open base
Min Typ Max Unit
- - 50 V
- - 500 mA
1.54 2.2 2.86 kΩ
4.1 4.55 5


NXP Semiconductors Electronic Components Datasheet

PDTD123YT Datasheet

50V resistor-equipped transistor

No Preview Available !

NXP Semiconductors
PDTB123YT
PNP 500 mA, resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
input (base)
GND (emitter)
output (collector)
Simplified outline
Graphic symbol
3
12
006aaa144
R1
1
3
R2
2
sym003
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description
PDTB123YT
-
plastic surface-mounted package; 3 leads
4. Marking
Table 4. Marking codes
Type number
PDTB123YT
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Marking code[1]
*7Y
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VCBO
VCEO
VEBO
VI
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
open emitter
open base
open collector
-
-
-
-
negative
-
IO output current
-
Version
SOT23
Max Unit
50 V
50 V
5 V
+5
12
500
V
V
mA
PDTB123YT
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 30 August 2010
© NXP B.V. 2010. All rights reserved.
2 of 10


Part Number PDTD123YT
Description 50V resistor-equipped transistor
Maker NXP
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PDTD123YT Datasheet PDF






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