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PDTD123ES, PDTD123E - 50V resistor-equipped transistors

PDTD123ES Description

PDTD123E series NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev.02 * 16 November 2009 Product data sheet 1..
500 mA NPN Resistor-Equipped Transistors (RET) family.

PDTD123ES Features

* Built-in bias resistors
* Simplifies circuit design
* 500 mA output current capability
* Reduces component count
* Reduces pick and place costs

PDTD123ES Applications

* Digital application in automotive and industrial segments
* Controlling IC inputs
* Cost saving alternative for BC817 series in digital applications
* Switching loads 1.4 Quick reference data Table 2. Symbol VCEO IO R1 R2/R1 Quick reference data Parameter collec

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: PDTD123ES, PDTD123E. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
PDTD123ES, PDTD123E
Manufacturer
NXP ↗
File Size
109.56 KB
Datasheet
PDTD123E_PhilipsSemiconductors.pdf
Description
50V resistor-equipped transistors
Note
This datasheet PDF includes multiple part numbers: PDTD123ES, PDTD123E.
Please refer to the document for exact specifications by model.

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50V resistor-equipped transistors NXP
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