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PDTD113ZT Datasheet

NPN resistor-equipped transistor

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PDTD113ZT
NPN 500 mA, 50 V resistor-equipped transistor;
R1 = 1 k, R2 = 10 k
Rev. 02 — 23 March 2009
Product data sheet
1. Product profile
1.1 General description
NPN 500 mA Resistor-Equipped Transistor (RET) in a small Surface-Mounted
Device (SMD) plastic package.
PNP complement: PDTB113ZT.
1.2 Features
I Built-in bias resistors
I Simplifies circuit design
I 500 mA output current capability
I Reduces component count
I Reduces pick and place costs
I ±10 % resistor ratio tolerance
1.3 Applications
I Digital application in automotive and
industrial segments
I Controlling IC inputs
I Cost-saving alternative for BC817 series
in digital applications
I Switching loads
1.4 Quick reference data
Table 1.
Symbol
VCEO
IO
R1
R2/R1
Quick reference data
Parameter
collector-emitter voltage
output current
bias resistor 1 (input)
bias resistor ratio
Conditions
open base
Min Typ Max Unit
- - 50 V
- - 500 mA
0.7 1
1.3 k
9 10 11


NXP Semiconductors Electronic Components Datasheet

PDTD113ZT Datasheet

NPN resistor-equipped transistor

No Preview Available !

NXP Semiconductors
PDTD113ZT
NPN 500 mA resistor-equipped transistor; R1 = 1 k, R2 = 10 k
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
input (base)
GND (emitter)
output (collector)
Simplified outline Graphic symbol
3
12
R1
1
3
R2
2
sym007
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description
PDTD113ZT -
plastic surface-mounted package; 3 leads
4. Marking
Table 4. Marking codes
Type number
PDTD113ZT
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Marking code[1]
*7V
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
VCBO
VCEO
VEBO
VI
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
open emitter
open base
open collector
-
-
-
-
negative
-
IO output current
-
Version
SOT23
Max Unit
50 V
50 V
5V
+10 V
5 V
500 mA
PDTD113ZT_2
Product data sheet
Rev. 02 — 23 March 2009
© NXP B.V. 2009. All rights reserved.
2 of 9


Part Number PDTD113ZT
Description NPN resistor-equipped transistor
Maker NXP
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PDTD113ZT Datasheet PDF






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