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PDTD113ES - 50V resistor-equipped transistors

This page provides the datasheet information for the PDTD113ES, a member of the PDTD113E 50V resistor-equipped transistors family.

Datasheet Summary

Description

500 mA NPN Resistor-Equipped Transistors (RET) family.

Table 1.

[1] Also available in SOT54A and SOT54 variant packages (see Section 2).

Features

  • Built-in bias resistors.
  • Simplifies circuit design.
  • 500 mA output current capability.
  • Reduces component count.
  • Reduces pick and place costs.
  • ±10 % resistor ratio tolerance 1.3.

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Datasheet Details

Part number PDTD113ES
Manufacturer NXP
File Size 109.64 KB
Description 50V resistor-equipped transistors
Datasheet download datasheet PDTD113ES Datasheet
Additional preview pages of the PDTD113ES datasheet.

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Full PDF Text Transcription

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PDTD113E series NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ Rev. 02 — 16 November 2009 Product data sheet 1. Product profile 1.1 General description 500 mA NPN Resistor-Equipped Transistors (RET) family. Table 1. Product overview Type number Package NXP PDTD113EK SOT346 PDTD113ES[1] SOT54 PDTD113ET SOT23 JEITA SC-59A SC-43A - JEDEC TO-236 TO-92 TO-236AB [1] Also available in SOT54A and SOT54 variant packages (see Section 2). PNP complement PDTB113EK PDTB113ES PDTB113ET 1.2 Features „ Built-in bias resistors „ Simplifies circuit design „ 500 mA output current capability „ Reduces component count „ Reduces pick and place costs „ ±10 % resistor ratio tolerance 1.
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