PDTC323TK Datasheet | NXP Semiconductors

description 500 m A NPN Resistor-Equipped Transistor (RET) in a small SOT346 (SC-59A) SMD plastic package. PNP plement: PDTA323TK. 1.2 Features s Built-in bias resistors s Simplifies circuit design s 500 m A output current capability s Reduces ponent count s Reduces pick and place costs 1.3 Applications s Digital application in automotive and industrial segments s Controlling IC inputs s Cost saving alternative for BC817 series in digital applications s Switching loads 1.4 Quick reference data Table 1: Symbol VCEO IO R1 Quick reference data Parameter collector-emitter voltage output current bias resistor 1 (input) Conditions open base Min 1.54 Typ 2.2 Max 15 500 2.86 Unit V m A kΩ Philips Semiconductors NPN 500 m A resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open 2. Pinning information Table 2: Pin 1 2 3 Pinning Description input (base) GND (emitter) output (collector) 1 1 2 2 sym012 Simplified outline Symbol R1 3. Ordering information Table 3: Ordering information Package Name PDTC323TK SC-59A Description plastic surface mounted package; 3 leads Version SOT346 Type number 4. Marking Table 4: Marking codes Marking code 57 Type number PDTC323TK 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO VI Parameter collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO Ptot Tstg Tj Tamb [1] Conditions open emitter open base open collector Min - Max 30 15 5 +12 - 5 500 250 +150 150 +150 Unit V V V V V m A m W °C °C °C output current total power dissipation storage temperature junction temperature ambient temperature Tamb ≤ 25 °C [1] - 65 - 65 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 9397 750 14946 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 - 3 June 2005 2 of 8 Philips Semiconductors NPN...