PDTC144EE Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC144EE NPN resistor-equipped transistor Product specification Supersedes data of 1997 Jul 03 File under Discrete Semiconductors, SC04 1998 Jul 16 Philips Semiconductors Product specification NPN resistor-equipped transistor Features - Built-in bias resistors R1 and R2 (typ. 47 kΩ each) - Simplification of circuit design - Reduces number of ponents and board space. APPLICATIONS - Especially suitable for space reduction in interface and driver circuits - Inverter circuit configurations without use of external resistors. DESCRIPTION NPN resistor-equipped transistor in an SC-75 plastic package. PNP plement: PDTA144EE. 1 3 2 MGA893 - 1 PDTC144EE handbook, halfpage 3 R1 1 R2 1 Top view MAM346 Fig.1 Simplified outline (SC-75) and symbol. MARKING TYPE NUMBER PDTC144EE MARKING CODE 08 PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground collector/output Fig.2 Equivalent inverter symbol. QUICK REFERENCE DATA SYMBOL VCEO IO ICM Ptot h FE R1 R2 -----R1 PARAMETER collector-emitter voltage output current (DC) peak collector current total power dissipation DC current gain input resistor resistor ratio Tamb ≤ 25 °C IC = 5 m A; VCE = 5 V CONDITIONS open base - - - - 80 33 0.8 MIN. - - - -...