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NXP Semiconductors Electronic Components Datasheet

PDTC143ZT Datasheet

NPN resistor-equipped transistors; R1 = 4.7 kW/ R2 = 47 kW

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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PDTC143ZT
NPN resistor-equipped transistor
Product specification
Supersedes data of 1998 May 19
1999 May 21


NXP Semiconductors Electronic Components Datasheet

PDTC143ZT Datasheet

NPN resistor-equipped transistors; R1 = 4.7 kW/ R2 = 47 kW

No Preview Available !

Philips Semiconductors
NPN resistor-equipped transistor
Product specification
PDTC143ZT
FEATURES
Built-in bias resistors R1 and R2 (typ. 4.7 kand 47 k
respectively)
Simplification of circuit design
Reduces number of components and board space.
PINNING
PIN
1
2
3
DESCRIPTION
base/input
emitter/ground
collector/output
APPLICATIONS
Especially suitable for space reduction in interface and
driver circuits
Inverter circuit configurations without use of external
resistors.
DESCRIPTION
NPN resistor-equipped transistor in a SOT23 plastic
package. PNP complement: PDTA143ZT.
MARKING
TYPE NUMBER
PDTC143ZT
MARKING CODE(1)
18
Note
1. = p : Made in Hong Kong.
= t : Made in Malaysia.
dbook, 4 columns
3
R1
1
R2
1
Top view
2
MAM097
3
2
Fig.1 Simplified outline (SOT23) and symbol.
1
MGA893 - 1
2
3
Fig.2 Equivalent inverter symbol.
1999 May 21
2


Part Number PDTC143ZT
Description NPN resistor-equipped transistors; R1 = 4.7 kW/ R2 = 47 kW
Maker NXP
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PDTC143ZT Datasheet PDF






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