NXP Semiconductors PDTC143ZT
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.| Part No. | PDTC143ZT |
|---|---|
| Datasheet | PDTC143ZT Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN resistor-equipped transistor |
| Buy | Stock & Price |
FEATURES
● Built-in bias resistors R1 and R2 (typ. 4.7 kΩ and 47 kΩ respectively)● Simplification of circuit design
● Reduces number of components and board space.
APPLICATIONS
● Especially suitable for space reduction in interface and driver circuits● Inverter circuit configurations without use of external resistors.
DESCRIPTION
NPN resistor-equipped transistor in a SOT23 plastic package. PNP complement: PDTA143ZT. 1 Top view 2 MAM097 PDTC143ZT PINNING PIN 1 2 3 base/input emitter/ground collector/outputDESCRIPTION
dbook, 4 columns 3 3 R1 1 R2 2 Fig.1 Simplified outline (SOT23) and symbol. MARKING TYPE NUMBER PDTC143ZT Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. 2 MGA893 - 1 MARKING CODE(1) ∗18 1 3 Fig.2 Equivalent inverter symbol. 1999 May 21 2 Philips Semiconductors Product specification NPN resistor-equipped transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO VI PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Note 1.
