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PDTC143ZS - NPN resistor-equipped transistors; R1 = 4.7 kW/ R2 = 47 kW

Description

QUICK REFERENCE DATA SYMBOL VCEO IO R1 R2 PARAMETER collector-emitter voltage output current (DC) bias resistor bias resistor TYP.

4.7 47 MAX.

UNIT V mA kΩ kΩ NPN resistor-equipped transistor (see “Simplified outline, symbol and pinnin

Features

  • Built-in bias resistors.
  • Simplified circuit design.
  • Reduction of component count.
  • Reduced pick and place costs.

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Datasheet Details

Part number PDTC143ZS
Manufacturer NXP
File Size 93.66 KB
Description NPN resistor-equipped transistors; R1 = 4.7 kW/ R2 = 47 kW
Datasheet download datasheet PDTC143ZS Datasheet
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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET PDTC143Z series NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ Product specification Supersedes data of 2004 Apr 06 2004 Aug 16 Philips Semiconductors Product specification NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplification • Inverter and interface circuits • Circuit driver. DESCRIPTION PDTC143Z series QUICK REFERENCE DATA SYMBOL VCEO IO R1 R2 PARAMETER collector-emitter voltage output current (DC) bias resistor bias resistor TYP. − − 4.7 47 MAX.
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