PDTC143ZEF Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET PDTC143Z series NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ Product specification Supersedes data of 2004 Apr 06 2004 Aug 16 Philips Semiconductors Product specification NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ Features - Built-in bias resistors - Simplified circuit design - Reduction of ponent count - Reduced pick and place costs. APPLICATIONS - General purpose switching and amplification - Inverter and interface circuits - Circuit driver. DESCRIPTION PDTC143Z series QUICK REFERENCE DATA SYMBOL VCEO IO R1 R2 PARAMETER collector-emitter voltage output current (DC) bias resistor bias resistor TYP. - - 4.7 47 MAX. 50 100 - - UNIT V m A kΩ kΩ NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). PRODUCT OVERVIEW PACKAGE TYPE NUMBER PHILIPS PDTC143ZE PDTC143ZEF PDTC143ZK PDTC143ZM PDTC143ZS PDTC143ZT PDTC143ZU Note 1. - = p: Made in Hong Kong. - = t: Made in Malaysia. - = W: Made in China. SOT416 SOT490 SOT346 SOT883 SOT54 (TO-92) SOT23 SOT323 EIAJ SC-75 SC-89 SC-59 SC-101 SC-43 - SC-70 38 53 18 E3 TC143Z - 18(1) - 54(1) PDTA143ZE PDTA143ZEF PDTA143ZK PDTA143ZM PDTA143ZS PDTA143ZT PDTA143ZU MARKING CODE PNP PLEMENT 2004 Aug 16 Philips Semiconductors Product...