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PDTC143TT - NPN resistor-equipped transistor

Description

NPN resistor-equipped transistor in a SOT23 plastic package.

MARKING TYPE NUMBER PDTC143TT Note 1.

∗ = p : Made in Hong Kong.

Features

  • Built-in bias resistor R1 (typ. 4.7 kΩ).
  • Simplification of circuit design.
  • Reduces number of components and board space.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PDTC143TT NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 29 1999 May 21 Philips Semiconductors Product specification NPN resistor-equipped transistor FEATURES • Built-in bias resistor R1 (typ. 4.7 kΩ) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space reduction in interface and driver circuits • Inverter circuit configurations without use of an external resistor. DESCRIPTION NPN resistor-equipped transistor in a SOT23 plastic package. MARKING TYPE NUMBER PDTC143TT Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia.
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