PDTC143TT Datasheet | NXP Semiconductors

FEATURES - Built-in bias resistor R1 (typ. 4.7 kΩ) - Simplification of circuit design - Reduces number of ponents and board space. APPLICATIONS - Especially suitable for space reduction in interface and driver circuits - Inverter circuit configurations without use of an external resistor. DESCRIPTION NPN resistor-equipped transistor in a SOT23 plastic package. MARKING TYPE NUMBER PDTC143TT Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) ∗33 ook, 4 columns PINNING PIN 1 2 3 base/input emitter/ground collector/output DESCRIPTION 3 3 R1 1 2 1 2 MAM360 Top view Fig.1 Simplified outline (SOT23) and symbol. 1 2 MGA893 - 1 Fig.2 Equivalent inverter symbol. 1999 May 21 Philips Semiconductors Product specification NPN resistor-equipped transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IO ICM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO ICEO IEBO h FE VCEsat R1 Cc PARAMETER collector cut-off current collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage input resistor collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz CONDITIONS IE = 0; VCB = 50 V IB = 0; VCE = 30 V IB = 0; VCE = 30 V; Tj = 150 °C IC = 0; VEB = 5 V IC = 1 m A; VCE = 5 V IC = 5 m A; IB = 0.25 m A MIN. - - - - 200 - 3.3 - PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 500 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage output current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector - - - - - - - 65 - - 65 MIN. MAX. 50 50 5 100 100 250...