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NXP Semiconductors Electronic Components Datasheet

PDTC143ES Datasheet

NPN resistor-equipped transistor

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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
PDTC143ES
NPN resistor-equipped transistor
Product specification
Supersedes data of 1997 Jul 03
File under Discrete Semiconductors, SC04
1998 May 20


NXP Semiconductors Electronic Components Datasheet

PDTC143ES Datasheet

NPN resistor-equipped transistor

No Preview Available !

Philips Semiconductors
NPN resistor-equipped transistor
Product specification
PDTC143ES
FEATURES
Built-in bias resistors R1 and R2
(typ. 4.7 keach)
Simplification of circuit design
Reduces number of components
and board space.
APPLICATIONS
Especially suitable for space
reduction in interface and driver
circuits
Inverter circuit configurations
without use of external resistors.
DESCRIPTION
NPN resistor-equipped transistor in a
TO-92; SOT54 plastic package.
PNP complement: PDTA143ES.
PINNING
PIN DESCRIPTION
1 base/input
2 collector/output
3 emitter/ground
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCEO
IO
ICM
Ptot
hFE
R1
collector-emitter voltage
output current (DC)
peak collector current
total power dissipation
DC current gain
input resistor
RR-----21-- resistor ratio
handbook, halfpage
1
2
3
R1
1
R2
MAM364
2
3
Fig.1 Simplified outline (TO-92; SOT54) and symbol.
1
MGL136
3
2
Fig.2 Equivalent inverter
symbol.
CONDITIONS
open base
Tamb 25 °C
IC = 10 mA; VCE = 5 V
MIN.
30
3.3
TYP.
4.7
MAX.
50
100
100
500
6.1
UNIT
V
mA
mA
mW
k
0.8 1
1.2
1998 May 20
2


Part Number PDTC143ES
Description NPN resistor-equipped transistor
Maker NXP
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PDTC143ES Datasheet PDF






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