Full PDF Text Transcription for PDTC124XEF (Reference)
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DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC124XEF NPN resistor-equipped transistor Preliminary specification Supersedes data of 1998 Nov 11 1999 May 18 Philips Semicond...
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ecification Supersedes data of 1998 Nov 11 1999 May 18 Philips Semiconductors Preliminary specification NPN resistor-equipped transistor FEATURES • Power dissipation comparable to SOT23 • Built-in bias resistors R1 and R2 (typ. 22 kΩ and 47 kΩ respectively) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space reduction in interface and driver circuits • Inverter circuit configurations without use of external resistors. Fig.1 DESCRIPTION NPN resistor-equipped transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. PNP complement:
PDTC124XEF Datasheet
