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NXP Semiconductors Electronic Components Datasheet

PDTC123JEF Datasheet

NPN resistor-equipped transistor

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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D425
PDTC123JEF
NPN resistor-equipped transistor
Preliminary specification
1999 May 27


NXP Semiconductors Electronic Components Datasheet

PDTC123JEF Datasheet

NPN resistor-equipped transistor

No Preview Available !

Philips Semiconductors
NPN resistor-equipped transistor
Preliminary specification
PDTC123JEF
FEATURES
Built-in bias resistors R1 and R2
(typ. 2.2 kand 47 k
respectively)
Simplification of circuit design
Reduces number of components
and board space.
APPLICATIONS
Especially suitable for space
reduction in interface and driver
circuits
Inverter circuit configurations
without use of external resistors.
DESCRIPTION
NPN resistor-equipped transistor in
an SC-89 (SOT490) plastic package.
PINNING
PIN DESCRIPTION
1 base/input
2 emitter/ground
3 collector/output
handbook, halfpage 3
1
1
Top view
2
MAM412
R1
R2
3
2
Fig.1 Simplified outline (SC-89; SOT490) and symbol.
1
MGA893 - 1
2
3
MARKING
TYPE
NUMBER
PDTC123JEF
MARKING
CODE
28
Fig.2 Equivalent inverter
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
VI
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
IO
ICM
Ptot
Tstg
Tj
Tamb
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb 25 °C; note 1
Note
1. Refer to SC-89 (SOT490) standard mounting conditions.
MIN.
MAX.
50
50
10
UNIT
V
V
V
+12 V
− −5 V
100 mA
100 mA
250 mW
65
+150
°C
150 °C
65
+150
°C
1999 May 27
2


Part Number PDTC123JEF
Description NPN resistor-equipped transistor
Maker NXP
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PDTC123JEF Datasheet PDF






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