PDTC123ET Datasheet (PDF) Download
NXP Semiconductors
PDTC123ET

Description

base/input emitter/ground collector/output 1 3 TYPE NUMBER PDTC123ET Note 1.

Key Features

  • Built-in bias resistors R1 and R2 (typ. 2.2 kΩ each)
  • Simplification of circuit design

Applications

  • Especially suitable for space reduction in interface and driver circuits