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PDTC123ET - NPN resistor-equipped transistor

Description

NPN resistor-equipped transistor in a SOT23 plastic package.

PNP complement: PDTA123ET.

Fig.1 Simplified outline (SOT23) and symbol.

Features

  • Built-in bias resistors R1 and R2 (typ. 2.2 kΩ each).
  • Simplification of circuit design.
  • Reduces number of components and board space. k, 4 columns PDTC123ET 3 3 R1 1 R2 2 1 2 MAM097.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC123ET NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 08 1999 May 21 Philips Semiconductors Product specification NPN resistor-equipped transistor FEATURES • Built-in bias resistors R1 and R2 (typ. 2.2 kΩ each) • Simplification of circuit design • Reduces number of components and board space. k, 4 columns PDTC123ET 3 3 R1 1 R2 2 1 2 MAM097 APPLICATIONS • Especially suitable for space reduction in interface and driver circuits • Inverter circuit configurations without use of external resistors. DESCRIPTION NPN resistor-equipped transistor in a SOT23 plastic package. PNP complement: PDTA123ET. Top view Fig.1 Simplified outline (SOT23) and symbol.
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