Part PDTC123ET
Description NPN resistor-equipped transistor
Category Transistor
Manufacturer NXP Semiconductors
Size 50.49 KB
NXP Semiconductors
PDTC123ET

Overview

base/input emitter/ground collector/output 1 3 TYPE NUMBER PDTC123ET Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia.

  • Built-in bias resistors R1 and R2 (typ. 2.2 kΩ each)
  • Simplification of circuit design
  • Reduces number of components and board space. k, 4 columns