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NXP Semiconductors Electronic Components Datasheet

PDTC123ET Datasheet

NPN resistor-equipped transistor

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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PDTC123ET
NPN resistor-equipped transistor
Product specification
Supersedes data of 1998 May 08
1999 May 21


NXP Semiconductors Electronic Components Datasheet

PDTC123ET Datasheet

NPN resistor-equipped transistor

No Preview Available !

Philips Semiconductors
NPN resistor-equipped transistor
Product specification
PDTC123ET
FEATURES
Built-in bias resistors R1 and R2 (typ. 2.2 keach)
Simplification of circuit design
Reduces number of components and board space.
k, 4 columns
3
APPLICATIONS
Especially suitable for space reduction in interface and
driver circuits
Inverter circuit configurations without use of external
resistors.
1
Top view
R1
1
R2
2
MAM097
3
2
DESCRIPTION
NPN resistor-equipped transistor in a SOT23 plastic
package. PNP complement: PDTA123ET.
PINNING
PIN
1
2
3
DESCRIPTION
base/input
emitter/ground
collector/output
MARKING
TYPE NUMBER
PDTC123ET
MARKING CODE(1)
26
Note
1. = p : Made in Hong Kong.
= t : Made in Malaysia.
Fig.1 Simplified outline (SOT23) and symbol.
1
MGA893 - 1
2
3
Fig.2 Equivalent inverter symbol.
1999 May 21
2


Part Number PDTC123ET
Description NPN resistor-equipped transistor
Maker NXP
PDF Download

PDTC123ET Datasheet PDF






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