PDTC123ET Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC123ET NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 08 1999 May 21 Philips Semiconductors Product specification NPN resistor-equipped transistor Features - Built-in bias resistors R1 and R2 (typ. 2.2 kΩ each) - Simplification of circuit design - Reduces number of ponents and board space. k, 4 columns 3 3 R1 1 R2 2 1 2 MAM097 APPLICATIONS - Especially suitable for space reduction in interface and driver circuits - Inverter circuit configurations without use of external resistors. DESCRIPTION NPN resistor-equipped transistor in a SOT23 plastic package. PNP plement: PDTA123ET. Top view Fig.1 Simplified outline (SOT23) and symbol. PINNING PIN 1 2 3 MARKING DESCRIPTION base/input emitter/ground collector/output 1 3 TYPE NUMBER PDTC123ET Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) ∗26 MGA893 - 1 Fig.2 Equivalent inverter symbol. 1999 May 21 Philips Semiconductors Product specification NPN resistor-equipped...