PDTC123ET Datasheet | NXP Semiconductors

FEATURES - Built-in bias resistors R1 and R2 (typ. 2.2 kΩ each) - Simplification of circuit design - Reduces number of ponents and board space. k, 4 columns 3 3 R1 1 R2 2 1 2 MAM097 APPLICATIONS - Especially suitable for space reduction in interface and driver circuits - Inverter circuit configurations without use of external resistors. DESCRIPTION NPN resistor-equipped transistor in a SOT23 plastic package. PNP plement: PDTA123ET. Top view Fig.1 Simplified outline (SOT23) and symbol. PINNING PIN 1 2 3 MARKING DESCRIPTION base/input emitter/ground collector/output 1 3 TYPE NUMBER PDTC123ET Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) ∗26 MGA893 - 1 Fig.2 Equivalent inverter symbol. 1999 May 21 Philips Semiconductors Product specification NPN resistor-equipped transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO VI PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO ICEO IEBO h FE VCEsat Vi(off) Vi(on) R1 R2 ------R1 Cc PARAMETER collector cut-off current collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage input-off voltage input-on voltage input resistor resistor ratio collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz CONDITIONS IE = 0; VCB = 50 V IB = 0; VCE = 30 V IB = 0; VCE = 30 V; Tj = 150 °C IC = 0; VEB = 5 V IC = 20 m A; VCE = 5 V IC = 10 m A; IB = 0.5 m A IC = 1 m A; VCE = 5 V IC = 20 m A; VCE = 0.3 V MIN. - - - - 30 - - 2 1.54 0.8 - PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 output current (DC) peak collector current total power dissipation storage...