PDTC123E
Description
base collector emitter 1 2 3 3 PDTC123EE PDTC123EEF PDTC123EK PDTC123ET PDTC123EU 1 Top view 2 MDB269 1 2 handbook, halfpage base emitter collector 3 R1 1 R2 3 3 2 PDTC123EM handbook, halfpage 1 2 3 R1 1 3 1 bottom view MHC506 base emitter collector 3 2 R2 2 2004 Aug 06 3 Philips Semiconductors Product specification NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ.
Key Features
- Built-in bias resistors
- Simplified circuit design
- Reduction of ponent count
- Reduced pick and place costs. APPLICATIONS
- General purpose switching and amplification
- Inverter and interface circuits
