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PDTC123E - NPN resistor-equipped transistors

Description

QUICK REFERENCE DATA SYMBOL VCEO IO R1 R2 PARAMETER collector-emitter voltage output current (DC) bias resistor bias resistor TYP.

2.2 2.2 MAX.

UNIT V mA kΩ kΩ NPN resistor-equipped transistor (see “Simplified outline, symbol and pinni

Features

  • Built-in bias resistors.
  • Simplified circuit design.
  • Reduction of component count.
  • Reduced pick and place costs.

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www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET PDTC123E series NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Product specification Supersedes data of 2004 Mar 18 2004 Aug 06 Philips Semiconductors Product specification NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplification • Inverter and interface circuits • Circuit driver. DESCRIPTION PDTC123E series QUICK REFERENCE DATA SYMBOL VCEO IO R1 R2 PARAMETER collector-emitter voltage output current (DC) bias resistor bias resistor TYP. − − 2.2 2.2 MAX.
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