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NXP Semiconductors Electronic Components Datasheet

PDTC123E Datasheet

NPN resistor-equipped transistors

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DISCRETE SEMICONDUCTORS
DATA SHEET
PDTC123E series
NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
Product data sheet
Supersedes data of 2004 Mar 18
2004 Aug 06


NXP Semiconductors Electronic Components Datasheet

PDTC123E Datasheet

NPN resistor-equipped transistors

No Preview Available !

NXP Semiconductors
NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
Product data sheet
PDTC123E series
FEATURES
Built-in bias resistors
Simplified circuit design
Reduction of component count
Reduced pick and place costs.
APPLICATIONS
General purpose switching and amplification
Inverter and interface circuits
Circuit driver.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VCEO
collector-emitter
voltage
IO output current (DC)
R1 bias resistor
R2 bias resistor
TYP.
2.2
2.2
MAX. UNIT
50 V
100 mA
kΩ
kΩ
DESCRIPTION
NPN resistor-equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
PRODUCT OVERVIEW
TYPE NUMBER
PDTC123EE
PDTC123EEF
PDTC123EK
PDTC123EM
PDTC123ES
PDTC123ET
PDTC123EU
PACKAGE
PHILIPS
SOT416
SOT490
SOT346
SOT883
SOT54 (TO-92)
SOT23
SOT323
EIAJ
SC-75
SC-89
SC-59
SC-101
SC-43
SC-70
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
MARKING CODE PNP COMPLEMENT
5A
6A
48
G1
TC123E
*26(1)
*48(1)
PDTA123EE
PDTA123EEF
PDTA123EK
PDTA123EM
PDTA123ES
PDTA123ET
PDTA123EU
2004 Aug 06
2


Part Number PDTC123E
Description NPN resistor-equipped transistors
Maker NXP
PDF Download

PDTC123E Datasheet PDF






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