PDTC123
FEATURES
- Built-in bias resistors R1 and R2 (typ. 2.2 kΩ each)
- Simplification of circuit design
- Reduces number of ponents and board space. k, 4 columns
PDTC123ET
3 3 R1 1 R2 2 1 2
MAM097
APPLICATIONS
- Especially suitable for space reduction in interface and driver circuits
- Inverter circuit configurations without use of external resistors. DESCRIPTION
NPN resistor-equipped transistor in a SOT23 plastic package. PNP plement: PDTA123ET.
Top view
Fig.1 Simplified outline (SOT23) and symbol. PINNING PIN 1 2 3 MARKING
DESCRIPTION base/input emitter/ground collector/output
1 3
TYPE NUMBER PDTC123ET Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia.
MARKING CODE(1) ∗26
MGA893
- 1
Fig.2 Equivalent inverter symbol.
1999 May 21
Philips Semiconductors
Product specification
NPN resistor-equipped transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO VI PARAMETER collector-base voltage collector-emitter...
