PDTC114YM Datasheet Text
DISCRETE SEMICONDUCTORS
DATA SHEET
PDTC114Y series NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ
Product specification Supersedes data of 2003 Sep 10 2004 Aug 17
Philips Semiconductors
Product specification
NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ
Features
- Built-in bias resistors
- Simplified circuit design
- Reduction of ponent count
- Reduced pick and place costs. APPLICATIONS
- General purpose switching and amplification
- Inverter and interface circuits
- Circuit driver. DESCRIPTION
PDTC114Y series
QUICK REFERENCE DATA SYMBOL VCEO IO R1 R2 PARAMETER collector-emitter voltage output current (DC) bias resistor bias resistor TYP.
- - 10 47 MAX. 50 100
- - UNIT V mA kΩ kΩ
NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details).
PRODUCT OVERVIEW PACKAGE TYPE NUMBER PHILIPS PDTC114YE PDTC114YEF PDTC114YK PDTC114YM PDTC114YS PDTC114YT PDTC114YU Note 1.
- = p: Made in Hong Kong.
- = t: Made in Malaysia.
- = W: Made in China. SOT416 SOT490 SOT346 SOT883 SOT54 (TO-92) SOT23 SOT323 EIAJ SC-75 SC-89 SC-59 SC-101 SC-43
- SC-70 33 12 47 DU TC114Y
- 27(1)
- 30(1) PDTA114YE PDTA114YEF PDTA114YK PDTA114YM PDTA114YS PDTA114YT PDTA114YU MARKING CODE PNP PLEMENT
2004 Aug 17
2
Philips Semiconductors...
