PDTC114Y Overview
Description
base collector emitter 1 2 3 3 PDTC114YE PDTC114YEF PDTC114YK PDTC114YT PDTC114YU 1 Top view 2 MDB269 1 2 handbook, halfpage base emitter collector 3 R1 1 R2 3 3 2 PDTC114YM handbook, halfpage 1 2 3 R1 1 3 1 bottom view MHC506 base emitter collector 3 2 R2 2 2004 Aug 17 3 Philips Semiconductors Product specification NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ L.
Key Features
- Built-in bias resistors
- Simplified circuit design
- Reduction of component count
- Reduced pick and place costs. APPLICATIONS
- General purpose switching and amplification
- Inverter and interface circuits
- 10 47 MAX. 50 100
