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PDTC114Y - NPN resistor-equipped transistors

Description

QUICK REFERENCE DATA SYMBOL VCEO IO R1 R2 PARAMETER collector-emitter voltage output current (DC) bias resistor bias resistor TYP.

10 47 MAX.

UNIT V mA kΩ kΩ NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning

Features

  • Built-in bias resistors.
  • Simplified circuit design.
  • Reduction of component count.
  • Reduced pick and place costs.

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Datasheet preview – PDTC114Y

Datasheet Details

Part number PDTC114Y
Manufacturer NXP
File Size 1.27 MB
Description NPN resistor-equipped transistors
Datasheet download datasheet PDTC114Y Datasheet
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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET PDTC114Y series NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ Product specification Supersedes data of 2003 Sep 10 2004 Aug 17 Philips Semiconductors Product specification NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplification • Inverter and interface circuits • Circuit driver. DESCRIPTION PDTC114Y series QUICK REFERENCE DATA SYMBOL VCEO IO R1 R2 PARAMETER collector-emitter voltage output current (DC) bias resistor bias resistor TYP. − − 10 47 MAX.
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