PDTC114EK Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 PDTC114EK NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 19 1998 Nov 26 Philips Semiconductors Product specification NPN resistor-equipped transistor Features - Built-in bias resistors R1 and R2 (typ. 10 kΩ each) - Simplification of circuit design - Reduces number of ponents and board space. APPLICATIONS - Especially suitable for space reduction in interface and driver circuits - Inverter circuit configurations without use of external resistors. DESCRIPTION NPN resistor-equipped transistor in an SC-59 plastic package. PNP plement: PDTA114EK. 1 3 2 MGA893 - 1 PDTC114EK 3 3 R1 1 R2 2 1 Top view 2 MAM284 Fig.1 Simplified outline (SC-59) and symbol. MARKING TYPE NUMBER PDTC114EK MARKING CODE 04 PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground collector/output Fig.2 Equivalent inverter symbol. QUICK REFERENCE DATA SYMBOL VCEO IO ICM Ptot hFE R1 R2 ------R1 PARAMETER collector-emitter voltage output current (DC) peak collector current total power dissipation DC current gain input resistor resistor ratio Tamb ≤ 25 °C IC = 5 mA; VCE = 5 V CONDITIONS open base - - - - 30 7 0.8 MIN. - - - - - 10 1 TYP. MAX. 50 100 100 250...