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PDTB123ET Datasheet, NXP

PDTB123ET transistor equivalent, 50v resistor-equipped transistor.

PDTB123ET Avg. rating / M : 1.0 rating-11

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PDTB123ET Datasheet

Features and benefits


* 500 mA output current capability
* Built-in bias resistors
* Simplifies circuit design
* Reduces component count
* Reduces pick and place costs

Application


* Digital application in automotive and industrial segments
* Control of IC inputs
* Cost-saving alternativ.

Description

500 mA PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTD123ET. 1.2 Features and benefits
* 500 mA output current capability
* Built-in bias resistors
* S.

Image gallery

PDTB123ET Page 1 PDTB123ET Page 2 PDTB123ET Page 3

TAGS

PDTB123ET
50V
resistor-equipped
transistor
PDTB123E
PDTB123EQA
PDTB123EU
NXP

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