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PDTA123E - PNP resistor-equipped transistors

Description

QUICK REFERENCE DATA SYMBOL VCEO IO R1 R2 PARAMETER collector-emitter voltage output current (DC) bias resistor bias resistor TYP.

2.2 2.2 MAX.

50 100 UNIT V mA kΩ kΩ PNP resistor-equipped transistor (see “Simplified outline

Features

  • Built-in bias resistors.
  • Simplified circuit design.
  • Reduction of component count.
  • Reduced pick and place costs.

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Datasheet preview – PDTA123E

Datasheet Details

Part number PDTA123E
Manufacturer NXP Semiconductors
File Size 186.93 KB
Description PNP resistor-equipped transistors
Datasheet download datasheet PDTA123E Datasheet
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www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET DataSheet4U.com DataSh ee PDTA123E series PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Product specification Supersedes data of 2004 Apr 07 2004 Aug 02 DataSheet4U.com www.DataSheet4U.com Philips Semiconductors Product specification PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplification • Inverter and interface circuits • Circuit driver. DESCRIPTION PDTA123E series QUICK REFERENCE DATA SYMBOL VCEO IO R1 R2 PARAMETER collector-emitter voltage output current (DC) bias resistor bias resistor TYP. − − 2.2 2.2 MAX.
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