• Part: PBYR640CT
  • Description: Rectifier diodes Schottky barrier
  • Category: Diode
  • Manufacturer: NXP Semiconductors
  • Size: 33.78 KB
Download PBYR640CT Datasheet PDF
NXP Semiconductors
PBYR640CT
FEATURES - Low forward volt drop - Fast switching - Reverse surge capability - High thermal cycling performance - Low thermal resistance PBYR645CT series SYMBOL QUICK REFERENCE DATA VR = 35 V/ 40 V/ 45 V IO(AV) = 10 A VF ≤ 0.6V SOT82 DESCRIPTION a1 1 k 2 a2 3 GENERAL DESCRIPTION Dual, mon cathode schottky rectifier diodes in a plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR645CT series is supplied in the conventional leaded SOT82 package. PINNING PIN 1 2 3 tab anode 1 cathode anode 2 cathode LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VRRM VRWM VR IO(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current diode Peak repetitive reverse surge current per...