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NXP Semiconductors Electronic Components Datasheet

PBYR640CT Datasheet

Rectifier diodes Schottky barrier

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Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYR645CT series
FEATURES
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
SYMBOL
a1
1
k2
a2
3
QUICK REFERENCE DATA
VR = 35 V/ 40 V/ 45 V
IO(AV) = 10 A
VF 0.6V
GENERAL DESCRIPTION
Dual, common cathode schottky
rectifier diodes in a plastic
envelope. Intended for use as
output rectifiers in low voltage, high
frequency switched mode power
supplies.
The PBYR645CT series is supplied
in the conventional leaded SOT82
package.
PINNING
PIN DESCRIPTION
1 anode 1
2 cathode
3 anode 2
tab cathode
SOT82
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VRRM
VRWM
VR
IO(AV)
IFRM
IFSM
IRRM
Tj
Tstg
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified output
current (both diodes
conducting)
Repetitive peak forward
current per diode
Non-repetitive peak forward
current diode
Peak repetitive reverse
surge current per diode
Operating junction
temperature
Storage temperature
PBYR6
Tmb 100 ˚C
square wave; δ = 0.5; Tmb 119 ˚C
square wave; δ = 0.5; Tmb 119 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; Tj = 125 ˚C prior to
surge; with reapplied VRRM(max)
pulse width and repetition rate
limited by Tj max
MIN.
-
-
-
-
-
-
-
-
-
- 65
MAX.
35CT 40CT
35 40
35 40
35 40
10
10
75
82
1
150
150
45CT
45
45
45
UNIT
V
V
V
A
A
A
A
A
˚C
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-mb
Rth j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
per diode
both diodes
in free air
MIN.
-
-
-
TYP.
-
-
100
MAX. UNIT
5 K/W
4 K/W
- K/W
May 1998 1 Rev 1.200


NXP Semiconductors Electronic Components Datasheet

PBYR640CT Datasheet

Rectifier diodes Schottky barrier

No Preview Available !

Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYR645CT series
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
VF Forward voltage
IR Reverse current
Cd Junction capacitance
IF = 5 A; Tj = 125˚C
IF = 10 A
VR = VRWM
VR = VRWM; Tj = 100˚C
VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C
MIN.
-
-
-
-
-
TYP.
0.51
0.72
0.12
10
150
MAX. UNIT
0.6 V
0.87 V
0.5 mA
15 mA
- pF
May 1998 2 Rev 1.200


Part Number PBYR640CT
Description Rectifier diodes Schottky barrier
Maker NXP
Total Page 5 Pages
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