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NXP Semiconductors Electronic Components Datasheet

PBYR30100PT Datasheet

Rectifier diodes schottky barrier

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Philips Semiconductors
Rectifier diodes
schottky barrier
Product specification
PBYR30100PT series
GENERAL DESCRIPTION
Dual, low leakage, platinum barrier
schottky rectifier diodes in a plastic
envelope featuring low forward
voltage drop and absence of stored
charge. These devices can withstand
reverse voltage transients and have
guaranteed reverse surge capability.
The devices are intended for use in
switched mode power supplies and
high frequency circuits in general
where low conduction and zero
switching losses are important.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VRRM
VF
IO(AV)
PBYR30-
Repetitive peak reverse
voltage
Forward voltage
Output current (both
diodes conducting)
MAX.
60PT
60
0.7
30
MAX. MAX. UNIT
80PT 100PT
80 100 V
0.7 0.7 V
30 30 A
PINNING - SOT93
PIN DESCRIPTION
1 Anode 1 (a)
2 Cathode (k)
3 Anode 2 (a)
tab Cathode (k)
PIN CONFIGURATION
tab
123
SYMBOL
a1
k
a2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VRRM
VRWM
VR
IO(AV)
IO(RMS)
IFRM
IFSM
I2t
IRRM
IRSM
Tstg
Tj
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Tmb 139 ˚C
Output current (both diodes
conducting)1
RMS forward current
Repetitive peak forward current
per diode
Non-repetitive peak forward
current per diode.
I2t for fusing
Repetitive peak reverse current
per diode.
Non-repetitive peak reverse
current per diode.
Storage temperature
Operating junction temperature
square wave; δ = 0.5;
Tmb 124 ˚C
t = 25 µs; δ = 0.5;
Tmb 124 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; Tj = 125 ˚C prior
to surge; with reapplied
VRWM(max)
t = 10 ms
tp = 2 µs; δ = 0.001
tp = 100 µs
-
-
-
-
-
-
-
-
-
-
-
-65
-
MAX.
UNIT
-60 -80 -100
60 80 100 V
60 80 100 V
60 80 100 V
30 A
43 A
30 A
180 A
200 A
162 A2s
1A
1A
175 ˚C
150 ˚C
1 For output currents in excess of 20 A connection should be made to the exposed metal mounting base.
October 1994
1
Rev 1.100


NXP Semiconductors Electronic Components Datasheet

PBYR30100PT Datasheet

Rectifier diodes schottky barrier

No Preview Available !

Philips Semiconductors
Rectifier Diode
Schottky Barrier
Product Specification
PBYR30100PT series
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-mb
Rth j-a
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
per diode
both diodes
in free air.
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
VF Forward voltage (per diode)
IR Reverse current (per diode)
Cd Junction capacitance (per
diode)
CONDITIONS
IF = 15 A; Tj = 125˚C
IF = 30 A; Tj = 125˚C
IF = 15 A; Tj = 25˚C
VR = VRWM; Tj = 25 ˚C
VR = VRWM; Tj = 125 ˚C
f = 1MHz; VR = 5V; Tj = 25 ˚C to
125 ˚C
MIN.
-
-
-
TYP.
-
-
45
MAX.
1.4
1.0
-
UNIT
K/W
K/W
K/W
MIN.
-
-
-
-
-
-
TYP.
0.61
0.74
0.77
5.0
5.0
600
MAX.
0.70
0.85
0.85
150
15
-
UNIT
V
V
V
µA
mA
pF
October 1994
2
Rev 1.100


Part Number PBYR30100PT
Description Rectifier diodes schottky barrier
Maker NXP
Total Page 5 Pages
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