PBYR2540CTX Datasheet | NXP Semiconductors

FEATURES - Low forward volt drop - Fast switching - Reverse surge capability - High thermal cycling performance - Isolated mounting tab PBYR2545CTF, PBYR2545CTX SYMBOL QUICK REFERENCE DATA VR = 40 V/ 45 V IO(AV) = 20 A VF ≤ 0.65V a1 1 k 2 a2 3 GENERAL DESCRIPTION Dual, mon cathode schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR2545CTF is supplied in the SOT186 package. The PBYR2545CTX is supplied in the SOT186A package. PINNING PIN 1 2 3 tab DESCRIPTION anode 1 (a) cathode (k) anode 2 (a) isolated SOT186 case SOT186A case 1 2 3 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS PBYR25 PBYR25 VRRM VRWM VR IO(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current per diode Peak repetitive reverse surge current per diode Operating junction temperature Storage temperature Ths ≤ 86 ˚C square wave; δ = 0.5; Ths ≤ 98 ˚C square wave; δ = 0.5; Ths ≤ 98 ˚C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 ˚C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 65 MIN. MAX. 40CTF 40CTX 40 40 40 20 20 135 150 1 150 175 45CTF 45CTX 45 45 45 UNIT V V V A A A A A ˚C ˚C IRRM Tj Tstg October 1998 Rev 1.300 Philips Semiconductors Product specification Rectifier diodes Schottky barrier ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER Visol Peak isolation voltage from all terminals to external heatsink CONDITIONS PBYR2545CTF, PBYR2545CTX MIN. - TYP. MAX. UNIT 1500 V SOT186 package; R.H. ≤ 65%; clean and dustfree Visol R.M.S. isolation voltage from SOT186A package; f = 50-60 Hz; all...