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PBYR1045CTD Datasheet

Rectifier diodes Schottky barrier

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Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYR1045CTD series
FEATURES
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
SYMBOL
a1
1
k2
a2
3
QUICK REFERENCE DATA
VR = 40 V/ 45 V
IO(AV) = 10 A
VF 0.6 V
GENERAL DESCRIPTION
Dual schottky rectifier diodes
intended for use as output rectifiers
in low voltage, high frequency
switched mode power supplies.
The PBYR1045CTD series is
supplied in the SOT428 surface
mounting package.
PINNING
PIN DESCRIPTION
1 anode 1
2 cathode1
3 anode 2
tab cathode
SOT428
tab
2
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
VRRM
VRWM
VR
IO(AV)
IFRM
IFSM
IRRM
Tj
Tstg
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified forward
current (both diodes
conducting)
Repetitive peak forward
current per diode
Non-repetitive peak forward
current per diode
Peak repetitive reverse
surge current per diode
Operating junction
temperature
Storage temperature
PBYR10
-
-
Tmb 108 ˚C
square wave; δ = 0.5;
Tmb 127 ˚C
square wave; δ = 0.5;
Tmb 127 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; Tj = 125 ˚C prior to
surge; with reapplied VRRM(max)
pulse width and repetition rate
limited by Tj max
-
-
-
-
-
-
-
- 65
MAX.
40CTD
40
45CTD
45
40 45
40
10
45
UNIT
V
V
V
A
10 A
100 A
110 A
1A
150 ˚C
175 ˚C
1 it is not possible to make connection to pin 2 of the SOT428 package
July 1998
1
Rev 1.200


NXP Semiconductors Electronic Components Datasheet

PBYR1045CTD Datasheet

Rectifier diodes Schottky barrier

No Preview Available !

Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYR1045CTD series
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-mb
Rth j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
per diode
both diodes
pcb mounted, minimum footprint, FR4
board
ELECTRICAL CHARACTERISTICS
All characteristics are per diode at Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
VF Forward voltage
IR Reverse current
Cd Junction capacitance
IF = 5 A; Tj = 125˚C
IF = 10 A; Tj = 125˚C
IF = 10 A
VR = VRWM
VR = VRWM; Tj = 100˚C
VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C
MIN.
-
-
-
TYP.
-
-
50
MAX. UNIT
4.5 K/W
3 K/W
- K/W
MIN.
-
-
-
-
-
-
TYP.
0.52
0.7
0.72
0.06
6
155
MAX. UNIT
0.6 V
0.77 V
0.87 V
0.5 mA
15 mA
- pF
July 1998
2 Rev 1.200


Part Number PBYR1045CTD
Description Rectifier diodes Schottky barrier
Maker NXP
Total Page 5 Pages
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