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PBYR1045B Datasheet

Rectifier diodes Schottky barrier

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Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYR1045B series
FEATURES
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
SYMBOL
k
tab
QUICK REFERENCE DATA
VR = 40 V/ 45 V
a
3 IF(AV) = 10 A
VF 0.57 V
GENERAL DESCRIPTION
Schottky rectifier diodes in a plastic
envelope. Intended for use as
output rectifiers in low voltage, high
frequency switched mode power
supplies.
The PBYR1045B series is supplied
in the surface mounting SOT404
package.
PINNING
PIN DESCRIPTION
1 no connection
2 cathode1
3 anode
tab cathode
SOT404
mb
2
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
IRRM
Tj
Tstg
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified forward
current
Repetitive peak forward
current
Non-repetitive peak forward
current
Peak repetitive reverse
surge current
Operating junction
temperature
Storage temperature
PBYR10
Tmb 113 ˚C
square wave; δ = 0.5; Tmb 136 ˚C
square wave; δ = 0.5; Tmb 136 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; Tj = 125 ˚C prior to
surge; with reapplied VRRM(max)
pulse width and repetition rate
limited by Tj max
-
-
-
-
-
-
-
-
-
- 65
MAX.
40B 45B
40 45
40 45
40 45
10
20
135
150
1
150
175
UNIT
V
V
V
A
A
A
A
A
˚C
˚C
1 It is not possible to make connection to pin 2 of the SOT404 package.
July 1998
1
Rev 1.200


NXP Semiconductors Electronic Components Datasheet

PBYR1045B Datasheet

Rectifier diodes Schottky barrier

No Preview Available !

Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYR1045B series
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-mb
Rth j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
pcb mounted, minimum footprint, FR4
board
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
VF Forward voltage
IR Reverse current
Cd Junction capacitance
IF = 10 A; Tj = 125˚C
IF = 20 A; Tj = 125˚C
IF = 20 A
VR = VRWM
VR = VRWM; Tj = 100˚C
VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C
MIN. TYP. MAX. UNIT
- - 2 K/W
- 50 - K/W
MIN.
-
-
-
-
-
-
TYP.
0.5
0.69
0.65
0.2
22
350
MAX. UNIT
0.57 V
0.72 V
0.84 V
1.3 mA
35 mA
- pF
July 1998
2 Rev 1.200


Part Number PBYR1045B
Description Rectifier diodes Schottky barrier
Maker NXP
Total Page 5 Pages
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