PBYL1620 Datasheet | NXP Semiconductors

FEATURES - Low forward volt drop - Fast switching - Reverse surge capability - High thermal cycling performance - Low thermal resistance PBYL1625 series SYMBOL QUICK REFERENCE DATA VR = 20 V/ 25 V k 1 a 2 IF(AV) = 16 A VF ≤ 0.46 V GENERAL DESCRIPTION Schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYL1625 series is supplied in the SOD59 (TO220AC) conventional leaded package. PINNING PIN 1 2 tab DESCRIPTION cathode anode cathode SOD59 (TO220AC) tab LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VRRM VRWM VR IF(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified forward current Repetitive peak forward current Non-repetitive peak forward current Peak repetitive reverse surge current Operating junction temperature Storage temperature CONDITIONS PBYL16 Tmb ≤ 120 ˚C square wave; δ = 0.5; Tmb ≤ 131 ˚C square wave; δ = 0.5; Tmb ≤ 131 ˚C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 ˚C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 65 MIN. 20 20 20 20 16 32 135 150 1 150 175 MAX. 25 25 25 25 UNIT V V V A A A A A ˚C ˚C IRRM Tj Tstg March 1998 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes Schottky barrier THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS PBYL1625 series MIN. - TYP. MAX. UNIT 60 2 K/W K/W in free air - ELECTRICAL CHARACTERISTICS Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER VF IR Cd Forward voltage Reverse current Junction capacitance CONDITIONS IF = 16 A; Tj = 125˚C IF = 32 A; Tj = 125˚C IF = 32 A VR = VRWM VR = VRWM; Tj = 100˚C VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C MIN. TYP. MAX. UNIT 0.42 0.57 0.55 1 22 700 0.46 0.61 0.68 5 40 V V V m A m A p...