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NXP Semiconductors Electronic Components Datasheet

PBSS9110Y Datasheet

PNP Transistor

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PBSS9110Y
100 V, 1 A PNP low VCEsat (BISS) transistor
Rev. 02 — 22 November 2009
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat transistor in a SOT363 (SC-88) plastic package.
1.2 Features
„ SOT363 package
„ Low collector-emitter saturation voltage VCEsat
„ High collector current capability IC and ICM
„ High efficiency leading to less heat generation
1.3 Applications
„ Major application segments:
‹ Automotive 42 V power
‹ Telecom infrastructure
‹ Industrial
„ Peripheral driver:
‹ Driver in low supply voltage applications (e.g. lamps and LEDs)
‹ Inductive load driver (e.g. relays, buzzers and motors)
„ DC-to-DC converter
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
Conditions
Min Typ Max Unit
- - 100 V
- - 1 A
- - 3 A
- - 320 mΩ


NXP Semiconductors Electronic Components Datasheet

PBSS9110Y Datasheet

PNP Transistor

No Preview Available !

NXP Semiconductors
PBSS9110Y
100 V, 1 A PNP low VCEsat (BISS) transistor
2. Pinning information
Table 2.
Pin
1, 2, 5, 6
3
4
Discrete pinning
Description
collector
base
emitter
Simplified outline Symbol
654
123
1, 2, 5, 6
3
4
sym030
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
PBSS9110Y
-
plastic surface mounted package; 6 leads
4. Marking
Table 4. Marking
Type number
PBSS9110Y
[1] * = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking code
91*[1]
Version
SOT363
PBSS9110Y_2
Product data sheet
Rev. 02 — 22 November 2009
© NXP B.V. 2009. All rights reserved.
2 of 13


Part Number PBSS9110Y
Description PNP Transistor
Maker NXP
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PBSS9110Y Datasheet PDF






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